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Descripción |
Fabr. |
PDF |
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2SC5192 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DATA SHEET
SILICON TRANSISTOR
2SC5192
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWINGS
(Unit: mm)
+0.2
0.4 0.05
1.5
+0.2 0.1
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2SC5192-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DATA SHEET
SILICON TRANSISTOR
2SC5192
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWINGS
(Unit: mm)
+0.2
0.4 0.05
1.5
+0.2 0.1
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2SC5192-T2 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DATA SHEET
SILICON TRANSISTOR
2SC5192
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
FEATURES
Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current IC = 100 mA
PACKAGE DRAWINGS
(Unit: mm)
+0.2
0.4 0.05
1.5
+0.2 0.1
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