Datasheet 2SC5191 Equivalent ( PDF ) - Transistor

DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current 2.9±0.2 PACKAGE DRAWINGS (Unit: mm) 2.8±0.2 0.4 +0.1 0.05 1.5 0.65 +0.1 0.15 0.

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5191 DESCRIPTION ·Low Voltage Operation ,Low Phase Distortion ·Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GH- ·Large Absolute Maximum Collector Current IC = 100 mA APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~

DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current 2.9±0.2 PACKAGE DRAWINGS (Unit: mm) 2.8±0.2 0.4 +0.1 0.05 1.5 0.65 +0.1 0.15 0.

DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GH- NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GH- Large Absolute Maximum Collector Current 2.9±0.2 PACKAGE DRAWINGS (Unit: mm) 2.8±0.2 0.4 +0.1 0.05 1.5 0.65 +0.1 0.15 0.