Datasheet 2SC508 Equivalent ( PDF ) - Transistor

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS ·For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCB

2SC5080 Silicon NPN Epitaxial Application VHF , UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GH- Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base

2SC5081 Silicon NPN Epitaxial Application VHF , UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GH- Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 4 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base v

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperatu

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5084 DESCRIPTION ·High Gain Bandwidth Product fT = 7 GH- TYP. ·High Gain, Low Noise Figure S21e 2 = 11 dB TYP., NF = 1.1 dB TYP @ f = 1 GHz APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltag