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Descripción |
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2SC505 |
(2SCxxxx) High Voltage Transistors
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2SC5050 |
Silicon NPN Epitaxial
2SC5050
Silicon NPN Epitaxial
Application
VHF , UHF wide band amplifier
Features
High gain bandwidth product fT = 11 GH- Typ High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC5050
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collecto
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Silicon NPN Epitaxial
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash m
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2SC5051 |
Silicon NPN Epitaxial
2SC5051
Silicon NPN Epitaxial
Application
VHF , UHF wide band amplifier
Features
High gain bandwidth product fT = 11 GH- Typ High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
CMPAK
3
1 2
1. Emitter 2. Base 3. Collector
2SC5051
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collec
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Silicon NPN Epitaxial
2SC5051
Silicon NPN Epitaxial
REJ03G0741-0300 (Previous ADE-208-1131A) Rev.3.00 Aug.10.2005
Application
VHF , UHF wide band amplifier
Features
High gain bandwidth product fT = 11 GH- Typ High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R )
3
1. Emitter 2. Base 3. Collector
1 2
Note:
Marking is “Y
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