Datasheet 2SC496 Equivalent ( PDF ) - Transistor

Silicon NPN epitaxial planar transistor (PCT process) / Low collector-emitter saturation voltage (VCE(sat) ≈ 0.25V typ.) / Suitable for 0.5W to 2W output amplifier applications

Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 900

Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm s Features q q q 0.7 q 21.0±0.5 15.0±0.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 900 900

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4963 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolu

2SC4964 Silicon NPN Epitaxial ADE-208-005 1st. Edition Application VHF , UHF RF switch Features Low Ron and high performance for RF switch. Capable of high density mounting. Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4964 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power d