Datasheet 2SC4738 Equivalent ( PDF ) - Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity: hFE (IC = 0.1 mA), hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 120~700 Complementary to 2SA1832 Small package 2SC4738 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic

SMD Type Silicon NPN Epitaxial Planar type 2SC4738 Transistors SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 High voltage and high current:VCE=50V,IC=150mA(Max.) Excellent hFE linearity :hFE(IC=0.1mA), hFE(IC=2mA)=0.95(Typ.) High hFE: =120 to 700 +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collect

2SC4738 NPN TRANSISTOR P b Lead(Pb)-Free 1 3 2 FEATURES: High voltage and high current Excellent h FE linearity High h FE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC T

2SC4738 Elektronische Bauelemente 0.15A , 60V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Voltage and High Current High DC Current Gain Complementary to 2SA1832 A M 3 SOT-523 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SC4738-Y 120~240 LY 2SC4738-GR 2SC4738-BL 200~400 LG 350~700 LL F K

RoHS 2SC4738 2SC4738 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.1 W (Tamb=25℃) .,LCollector current ICM: 0.15 Collector-base voltage A OV(BR)CBO: 60 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-523 1. BASE 2. EMITTER 3. COLLECTOR ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown