Datasheet 2SC4115 Equivalent ( PDF ) - Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES - Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC , IB = 2A , 0.1A) - Excellent current gain characteristics. - Complements to 2SA1585 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collecto

SMD Type Low Frequency Transistor 2SC4115 Transistors Features Low VCE(sat):VCE(sat) = 0.2V (Typ.) IC , IB = 2A , 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current CollectorPower Dissipation Junotion Temperature storage Temperature *1 Single pulse pw=10ms Symbol VCBO VCEO VEBO IC ICP

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR C WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC, IB = 2A, 0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC

Transistors Low Frequency Transistor (20V, 3A) 2SD2150 , 2SC4115S , 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC , IB = 2A , 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 , 2SA1585S. FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-237-C74) 243 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SD2