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Datasheet 2SC3871 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SC3871 | Power Transistor
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3871
DESCRIPTION ·Collector-Base Breakdown Voltage: V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching
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APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE
UNIT
VCBO
Collec
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| Silicon NPN triple diffusion planar type Power Transistors
2SC3871
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 500 500 400 7
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2SC3 Datasheet ( Hoja de datos ) - Resultados que coinciden |
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| 2SC3006 | NPN TRANSISTOR
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| 2SC3011 | Silicon NPN epitaxial planer Transistor
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| 2SC3017 | NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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| P/N | Descripción | Fabr. | |
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