Datasheet 2SC3856 Equivalent ( PDF ) - Transistor

2SC3856 AUDIO POWER AMPLIFIER DC TO DC CONVERTER NPN PLANAR SILICON TRANSISTOR SC-65 ! ! ! High Current Capability High Power Dissipation Complementary to 2SA1492 ABSOLUTE MAXIMUM RATING (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3856 200 180 6 15 4 130(Tc=25°C) 150 55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA V

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1492 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Co

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3856-P DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage