Datasheet 2SC3710 Equivalent ( PDF ) - Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3710A 2SC3710A High-Power Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SA1452A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCE

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3710 DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1452 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings (Ta=25

Power Transistors 2SC3710 Silicon NPN Transistors www.jmnic.com Features With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base current Collector current Collector power dissipation Junction temperatu

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Fast Switching Speed ·Complement to Type 2SA1452A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1452A