Datasheet 2SC3671 Equivalent ( PDF )

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm • High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low saturati

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	2SC3671	Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3671 Strobe Flash Applications Medium Power Amplifier Applications 2SC3671 Unit: mm • High DC current gain and excellent hFE linearity : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) • Low saturati	Toshiba Semiconductor