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Datasheet 2SC3663 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SC3663 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURES
• Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc. • Gold electrode gives high reliability. • Mini mold package |
 NEC |
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| 1 | 2SC3663 | Transistor SMD Type
NPN Epitaxial Silicon Transistor 2SC3663
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz Ideal for battery |
 Kexin |
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