Datasheet 2SC3617 Equivalent ( PDF ) - Transistor

DATA SHEET SILICON TRANSISTOR 2SC3617 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and, or types are available in every country. Please check with an NEC Electronics sales representative for availability and

SMD Type NPN Silicon Epitaxia 2SC3617 Transistors Features World standard miniature package. High hFE hFE=800 to 1600. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Storage temperature * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP