Datasheet 2SC3583 Equivalent ( PDF ) - Transistor

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by di

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC3583 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GH- Ga = 13 dB TYP. @f = 1.0 GHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~UHF band.

SMD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.2 dB TYP. @f = 1.0 GH- Ga 13 dB TYP. @f = 1.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter