Datasheet 2SC3326 Equivalent ( PDF ) - Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 2SC3326 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200~1200 Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic

SMD Type Silicon NPN Epitaxial 2SC3326 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1 (typ.) (IB = 5 mA). +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 Small package. +0.1 0.38-0.1 +0.1 0.

2SC3326 Rev.E Mar.-2016 DATA SHEET 描述 , Descriptions SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 , Features 高 VEBO，高 hFE。 High emitter-base voltage, High DC current gain. 用途 , Applications 用于 。 For muting and switching applications. 部等效 路 , Equivalent Circuit 引脚排列 , Pinning 3 2 1 PIN1：Emitt