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2SC3279 |
10V, 2A, NPN Transistor
Strobe Flash Applications Medium Power Amplifier · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
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NPN Transistor
RoHS
2SC3279
2SC3279
TRANSISTOR (NPN) TO-92
FEATURES Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emi
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NPN Silicon Epitaxial Planar Transistor
ST 2SC3279
NPN Silicon Epitaxial Planar Transistor
for storobo flash and medium power amplifier applications. The transistor is subdivided into four groups L, M, N and P, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collect
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NPN Transistor
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NPN Silicon Epitaxial Transistors
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
2SC3279
Features
High DC Current Gain and excellent hFE Linearity hFE(1) =140-600 (V CE=1.0V, IC=0.5A) hFE(2) =70 (Min.), 200 (Typ.) (VCE=1.0V, IC=2.0A)
NPN Silicon Epitaxial Transistors
TO-92
A E
Pin Configuration Bottom View
E
C
B
Maximum Ratings
Symbol V CEO V CES V CBO V EBO IC IB PC TJ TSTG Symbo
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