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Descripción |
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2SC313 |
Silicon NPN Transistor
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Trans GP BJT NPN 160V 0.7A 3-Pin TO-126
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2SC3130 |
Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing)
Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification, oscillation, mixing
Unit: mm
2.8 0.3
+0.2
s Features
q q
0.65±0.15
+0.25 1.5 0.05
0.65±0.15
0.95
q
High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. Mini type package, allowing downsizing of the equipment and automatic insertion
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Silicon NPN RF Transistor
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3130
DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Output Capacitance
APPLICATIONS ·Designed for high-frequency amplification, oscillation, mixing
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO
Em
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Silicon NPN transistor
2SC3130
Rev.E Mar.-2016
DATA SHEET
描述 , Descriptions
SOT-23 塑封封 NPN 半 三 管。Silicon NPN transistor in a SOT-23 Plastic Package.
特征 , Features
特征 率 fT 高，共基 出 容小和反向 出 容小。 High fT, small Cob and small Crb.
用途 , Applications
用于高 放大、振 、混 。 High frequency amplifier, oscillation and mixing amplification.
部等
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