Datasheet 2SC2873 Equivalent ( PDF ) - Transistor

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Character

SMD Type Silicon PNP Epitaxial Type 2SC2873 Transistors Features Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 Small flat package. PC = 1.0 to 2.0 W s (typ.). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction tempe

2SC2873 NPN Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES - Low saturation voltage - High speed switching time - Complementary to 2SA1213 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector

2SC2873 TRANSISTOR (NPN) FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage Complementary to 2SA1213 APPLICATIONS Power Amplifier and Switching SOT- 89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-B

MCC Micro Commercial Components TM  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2873-O 2SC2873-Y NPN Silicon Epitaxial Transistors C 1. Base 2. Collector 3. Emitter Features x x x Low saturation voltage High speed switching time Complementary to 2SA1213 Lead Free Finish, RoHS Compliant ("P" Suffix designates RoHS Compliant. See orderin