Datasheet 2SC2120 Equivalent ( PDF ) - Transistor

Audio Power Amplifier Applications, High hFE: hFE (1) = 100~320 1 watts amplifier applications. Complementary to 2SA950

w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) FEATURES - High DC Current Gain - Complementary to 2SA950 TO 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Cu

TO-92L Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR(NPN) MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storag Temperature Value 35 30 5 0.8 600 150 -55～150 Units V V V A mW ℃ ℃ ELECTRICAL CHARAC

Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.4