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Renesas 2SC1969
Power Bipolar Transistor, 6A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Datasheet 2SC1969 Equivalent ( PDF ) - Transistor

P/N Descripción Fabr. PDF
2SC1969 NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on HF band Mobile radio applications)

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Mitsubishi Electric Semiconductor Mitsubishi Electric Semiconductor 2SC1969 datasheet
silicon NPN epitaxial planar type transistor

Description The Eleflow 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the HF band, ideal for mobile radio applications. Features High power gain: Gpe ≥ 12dB @Vcc = 12V, Po = 16W, f = 27MHz Emitter ballasted construction for reliability and performance. Manufactured incorporating recyclable RoHS compliant materials. Ability to periodically w
eleflow eleflow 2SC1969 datasheet
Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter
INCHANGE INCHANGE 2SC1969 datasheet

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2SC1969 npn transistor


1. Datasheet - NPN Transistor

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2N3904

NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects.

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