Datasheet 2SB962 Equivalent ( PDF ) - Transistor

Silicon Power Transistors 2SB962,962-Z PNP mm DC-DC 1.5 0.1 +0.2 fT hFE VCE(sat) VCE(sat) 1.6 ±0.2 6.5 ±0.2 5.0 ±0.2 2.3 ±0.2 0.5 ±0.1 5.5 ±0.2 7.0 MIN. 2 A 0.5 V 0.2 A 4 13.7 MIN. +0.2 1 2 3 TA = 25°C 1.1 ±0.2 VCBO VCEO VEBO IC(DC) 1 40 30 5.0 3.0 6.0 0.6 1.0 10 150 －55～＋150 V V V A A A W TO-251 MP-3 0.5 0.1 2.3 2.3 0.75 0.5 0.1 +0.2 IC(pulse) IB(DC) 2

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB962-Z DESCRIPTION ·Low VCE(sat)=-0.3V TYP ·PNP silicon epitaxial transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB962-Z is designed for Audio frequency amplifier and switching ,especially in hybrid integrated circuits ABSOLUTE MAXIMUM RATINGS(

SMD Type PNP Silicon Epitaxial Transistor 2SB962-Z TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat): VCE(sat)=-0.3V. +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Rat