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Datasheet 2SB679 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SB679 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SB679
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079
APPLICATIONS ·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
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2SB6 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SB605 | PNP SILICON TRANSISTOR
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| 2SB621 | Silicon PNP epitaxial planer type(For low-frequency output amplification)
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| 2SB621A | Silicon PNP epitaxial planer type(For low-frequency output amplification)
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| 2SB624 | AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
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| 2SB631 | 100V/120V/ 1A Low-Frequency Power Amp Applications
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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| P/N | Descripción | Fabr. | |
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