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Datasheet 2SA1967 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SA1967 | NPN Triple Diffused Planar Silicon Transistor Ordering number:5182
NPN Triple Diffused Planar Silicon Transistor
2SA1967
High-Voltage Amplifier, High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min= 900V). · Small Cob (Cob typ=2.2pF). · High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SA1967]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Volt
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2SA1 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SA1006 | PNP/NPN SILICON EPITAXIAL TRANSISTOR
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| 2SA1006A | PNP Power Transistor ( -200V, -1.5A )
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| 2SA1006B | PNP/NPN SILICON EPITAXIAL TRANSISTOR
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| 2SA1010 | SILICON PNP POWER TRANSISTOR
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| 2SA1011 | POWER TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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