Datasheet 2SA1900 Equivalent ( PDF ) - Transistor

Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, ther

SMD Type Medium power transistor 2SA1900 TransistIoCrs Features Low saturation voltage, typically VCE(sat) = 0.15V at IC , IB = 500mA , 50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector current Symbol VCEO VCBO VEBO IC Collector power dissipation PC Jumction temperature S

2SA1900U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pw = 20 ms) Collector Power Dissipation Junction Temperature Storage Temperature Range 1) When mounted on a 40 x 40 x 0.7 mm ceramic board. Characteristics at Ta = 25℃ P