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Datasheet 2SA1297 Equivalent ( PDF ) - Transistor |
| P/N | Descripción | Fabr. | |
| 2SA1297 | Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1297
Power Amplifier Applications Power Switching Applications
2SA1297
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A Complementary to 2SC3267.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 20 V
Emitter-base
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2SA1 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 2SA1006 | PNP/NPN SILICON EPITAXIAL TRANSISTOR
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| 2SA1006A | PNP Power Transistor ( -200V, -1.5A )
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| 2SA1006B | PNP/NPN SILICON EPITAXIAL TRANSISTOR
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| 2SA1010 | SILICON PNP POWER TRANSISTOR
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| 2SA1011 | POWER TRANSISTOR
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| 2SC2762 | 18V, 0.4A, NPN Transistor, Can type
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| 2SV-09 | 9 positions / Screwless Terminal Blocks
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| P/N | Descripción | Fabr. | |
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