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Descripción |
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2N699 |
NPN Silicon Transistor
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
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Transistor, NPN Silicon Type
Continental Device India Limited
An ISO, TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON EPITAXIAL TRANSISTOR
2N 699
TO-39 Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCER
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Total Device Dissipation @ Ta=25ºC
P
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GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (5 Ta = 25°C Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Temperature Temperature Range
Symbol VCER VCBO Vebo PD
PD
Tj, Tstg
Value 80 120
5.0 0.6 4.0
2.0 13.3
-65 to +200
Unit Vdc Vdc Vdc Watt
mW, °C Watts mW, °C
°C
THERMA
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2N6990 |
Chip Type 2C2222A Geometry 0400 Polarity NPN
Data Sheet No. 2C2222A
Chip Type 2C2222A Geometry 0400 Polarity NPN
Generic Packaged Parts: 2N2219, 2N2219A, 2N2222, 2N2222A
Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices.
Part Numbers:
2N2222A, 2N2222, 2N2219, 2N2219A, 2N2219AL, 2N2222AUB, SD2222A, SD2222AF, SQ2222A, SQ2222AF, 2N5582, 2N6989, 2N6990
Product Summary: APPLICATIONS: Designed for genera
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2N699B |
Small Signal Transistors
Small Signal Transistors TO-39 Case
TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ ( A) *ICEO **ICES ***ICEV ****ICER MIN 6.0 6.0 5.0 5.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 5.0 6.0 5.0 5.0 5.0 6.0 6.0 6.0 6.0 6.0 5.0 5.0 5.0 7.0 6.0 4.5 6.0 7.0 7.0 6.0 6.0 7.0 7.0 7.0 7.0 7.0 10 10 1.00 1.00 0.05 0.01 10 10 5.00 15 15 15 1.00 0.10 0.50 0.10 0.20 0.20 1.00 10 10 10 10 10 1.00 1.0
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