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Datasheet 2N6303 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2N6303 | Power Transistor |
 Crystaloncs |
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| 3 | 2N6303 | Bipolar PNP Device 2N6303
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
6.10 (0.240) 6.60 (0.260)
12.70 (0.500)
min.
(00.0.8395)max.
0.41 (0.016) 0.53 (0.021)
dia.
5.08 (0.200) typ.
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.86 (0.034)
2 13
45°
2.54 (0.100)
1 – Emitter
TO39 (T |
 Seme LAB |
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| 2 | 2N6303 | Silicon PNP Power Transistors 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
• • •
2N6303
High-Speed Switching Medium-Current Switching High-Frequency Amplifiers Collector-Emitter Sustaining Voltage: VCEO(sus) = - 80 Vdc (Min) DC Current Gain: h FE = 30 |
 Microsemi Corporation |
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| 1 | 2N6303 | Trans GP BJT PNP 80V 3A 3-Pin TO-5 |
 New Jersey Semiconductor |
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