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Datasheet 2N6057 Equivalent ( PDF ) - Transistor |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 2N6057 | POWER TRANSISTORS(12A/150W) A
A
A
A
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![]() Mospec Semiconductor |
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2 | 2N6057 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
![]() Boca Semiconductor Corporation |
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3 | 2N6057 | Bipolar NPN Device 2N6057
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max.
16.64 (0.655) 17.15 (0.675)
1
2
Bipolar NPN Device. VCEO = 60V
3 (case) 3.84 (0.151) 4.09 (0
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![]() Seme LAB |
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4 | 2N6057 | POWER COMPLEMENTARY Silicon TRANSISTORS NPN 2N6057 2N6058 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS
The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary PNP types are 2N6050, 2N6051 and 2N6052 respectively. Compliance to RoHS.
ABSOLUTE MAXIMU
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![]() Comset Semiconductors |
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5 | 2N6057 | Trans Darlington NPN 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
![]() New Jersey Semiconductor |
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2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe
| ![]() Unisonic Technologies |
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2 | 2N60-E | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi
| ![]() Unisonic Technologies |
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3 | 2N6008 | Series 2N Transistors
| ![]() Sprague |
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4 | 2N6009 | Series 2N Transistors
| ![]() Sprague |
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5 | 2N6010 | Silicon Transistors
| ![]() Semiconductor |
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6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte
| ![]() Central Semiconductor |
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7 | 2N6027 | Programmable Unijunction Transistor
2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor trigger,
| ![]() ON Semiconductor |
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Esta página es del resultado de búsqueda del 2N6057. Si pulsa el resultado de búsqueda de 2N6057 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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![]() Sanken |
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