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Datasheet 2N6057 Equivalent ( PDF ) - Transistor

N.º Número de pieza Descripción Fabricantes Comprar ahora
12N6057 POWER TRANSISTORS(12A/150W)

A A A A
Mospec Semiconductor
Mospec Semiconductor
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22N6057 DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

Boca Semiconductor Corporation
Boca Semiconductor Corporation
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32N6057 Bipolar NPN Device

2N6057 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 60V 3 (case) 3.84 (0.151) 4.09 (0
Seme LAB
Seme LAB
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42N6057 POWER COMPLEMENTARY Silicon TRANSISTORS

NPN 2N6057 2N6058 2N6059 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6057, 2N6058 and 2N6059 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary PNP types are 2N6050, 2N6051 and 2N6052 respectively. Compliance to RoHS. ABSOLUTE MAXIMU
Comset Semiconductors
Comset Semiconductors
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52N6057 Trans Darlington NPN 60V 12A 3-Pin(2+Tab) TO-3 Sleeve

New Jersey Semiconductor
New Jersey Semiconductor
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2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 2N60 N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe
Unisonic Technologies
Unisonic Technologies
datasheet 2N60 pdf
2 2N60-E N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 2N60-E 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi
Unisonic Technologies
Unisonic Technologies
datasheet 2N60-E pdf
3 2N6008 Series 2N Transistors

Sprague
Sprague
datasheet 2N6008 pdf
4 2N6009 Series 2N Transistors

Sprague
Sprague
datasheet 2N6009 pdf
5 2N6010 Silicon Transistors

Semiconductor
Semiconductor
datasheet 2N6010 pdf
6 2N6027 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte
Central Semiconductor
Central Semiconductor
datasheet 2N6027 pdf
7 2N6027 Programmable Unijunction Transistor

2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor trigger,
ON Semiconductor
ON Semiconductor
datasheet 2N6027 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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