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Datasheet 2N6054 Equivalent ( PDF ) - Transistor |
| N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
| 1 | 2N6054 | POWER TRANSISTORS(8A/100W) A
A
A
A
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 Mospec Semiconductor |
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| 2 | 2N6054 | (2N6053 / 2N6054) Silicon Power Transistor SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2)
PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N6053 2N6054
Fig.1 simplified outline (TO-3) and sym
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 SavantIC |
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| 3 | 2N6054 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR |
 New Jersey Semiconductor |
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| 4 | 2N6054 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824
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 Central Semiconductor |
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2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe
|  Unisonic Technologies |
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| 2 | 2N60-E | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Thi
| Unisonic Technologies |
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| 3 | 2N6008 | Series 2N Transistors
|  Sprague |
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| 4 | 2N6009 | Series 2N Transistors
| Sprague |
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| 5 | 2N6010 | Silicon Transistors
|  Semiconductor |
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| 6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte
| Central Semiconductor |
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| 7 | 2N6027 | Programmable Unijunction Transistor
2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor trigger,
|  ON Semiconductor |
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