|
|
Datasheet 2N5401C Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2N5401C | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.)
MAXIMU |
KEC |
2N54 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2N5401 | 600mA, 150V, PNP high-voltage transistor |
NXP Semiconductors |
|
2N5454 | DUAL N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil Corporation |
|
2N5465 | (2N5460 - 2N5465) JFET Amplifiers |
Motorola Semiconductor |
Esta página es del resultado de búsqueda del 2N5401C. Si pulsa el resultado de búsqueda de 2N5401C se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |