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Datasheet 2N2955 Equivalent ( PDF ) - Transistor |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 2N2955 | SILICON PNP TRANSISTOR UTC 2N2955
SILICON PNP TRANSISTORS
The UTC 2N2955 is a silicon PNP transistor in TO-3
SILICON PNP TRANSISTOR
metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETERS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle
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![]() Unisonic Technologies |
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2 | 2N2955 | PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R
2N2955
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
TO-3
1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18)
Pinning
1 = Base 2 = Emitter Case = Collector
.135 Max (3.4
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![]() Dc Components |
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3 | 2N2955HV | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N2955HV
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY
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![]() Inchange Semiconductor |
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2N2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2N20 | N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
| ![]() Inchange Semiconductor |
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2 | 2N2000 | 20V, NPN Transistor (TO-5 )
Vcbo=50V, Vceo=20V, Alloy-junction germanium transistor
| ![]() ETC |
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3 | 2N2001 | Alloy-junction germanium transistor
20V, NPN Transistor. Vcbo=30V, Vceo=20V, TO-5 Type
| ![]() ETC |
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4 | 2N2017 | Small Signal Transistor
60V, 0.2A, NPN amplifier / switch.
| ![]() Central Semiconductor |
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5 | 2N2017 | BJT NPN Transisor ( 60V 0.5A 6-Pin TO-78 )
| ![]() New Jersey Semiconductor |
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6 | 2N2018 | 125V, 1A, NPN Transistor
TO-111 Type, Vcbo=150V, Vebo=6V, Pd=20W
| ![]() New Jersey Semiconductor |
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7 | 2N2019 | 140V, 1A, NPN Transistor ( TO-111 )
Vceo=140V, Vcbo=200V, Vebo=6V,Pd=20W
| ![]() New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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