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Datasheet 2N2955 Equivalent ( PDF ) - Transistor

N.º Número de pieza Descripción Fabricantes Comprar ahora
12N2955 SILICON PNP TRANSISTOR

UTC 2N2955 SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 SILICON PNP TRANSISTOR metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Colle
Unisonic Technologies
Unisonic Technologies
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22N2955 PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Pinning 1 = Base 2 = Emitter Case = Collector .135 Max (3.4
Dc Components
Dc Components
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32N2955HV Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY
Inchange Semiconductor
Inchange Semiconductor
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2N2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1 2N20 N-Channel MOSFET Transistor

FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
Inchange Semiconductor
Inchange Semiconductor
datasheet 2N20 pdf
2 2N2000 20V, NPN Transistor (TO-5 )

Vcbo=50V, Vceo=20V, Alloy-junction germanium transistor
ETC
ETC
datasheet 2N2000 pdf
3 2N2001 Alloy-junction germanium transistor

20V, NPN Transistor. Vcbo=30V, Vceo=20V, TO-5 Type
ETC
ETC
datasheet 2N2001 pdf
4 2N2017 Small Signal Transistor

60V, 0.2A, NPN amplifier / switch.
Central Semiconductor
Central Semiconductor
datasheet 2N2017 pdf
5 2N2017 BJT NPN Transisor ( 60V 0.5A 6-Pin TO-78 )

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N2017 pdf
6 2N2018 125V, 1A, NPN Transistor

TO-111 Type, Vcbo=150V, Vebo=6V, Pd=20W
New Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N2018 pdf
7 2N2019 140V, 1A, NPN Transistor ( TO-111 )

Vceo=140V, Vcbo=200V, Vebo=6V,Pd=20W
New Jersey Semiconductor
New Jersey Semiconductor
datasheet 2N2019 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
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