|
|
Datasheet 2N2608 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 2N2608 | JFET GENERAL PURPOSE 2N2608 2N2609
CASE 22-03, STYLE 12
TO-18 (TO-206AA) JFET
GENERAL PURPOSE
—P-CHANNEL DEPLETION
Refer to 2N5460 for graphs.
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Storage Temperature R |
Motorola Semiconductors |
|
3 | 2N2608 | P-Channel Silicon Junction Field-Effect Transistor 8/2014
2N2608, 2N2609
P-Channel Silicon Junction Field-Effect Transistor
∙ Low-Level Choppers ∙ Data Switches ∙ Commutators
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -30V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 300 |
InterFET |
|
2 | 2N2608 | P-CHANNEL J-FET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/295
DEVICES
2N2608
LEVELS
MQ = JAN Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted |
Microsemi |
|
1 | 2N2608 | Trans JFET P-CH 5mA 3-Pin TO-18 |
New Jersey Semiconductor |
Esta página es del resultado de búsqueda del 2N2608. Si pulsa el resultado de búsqueda de 2N2608 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |