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Datasheet 1SS416 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 1SS416 | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416
1SS416
High Speed Switching Application
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
0.1
0.6±0.05
Unit: mm
A
CATHODE MARK
1.0±0.05
0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Maximum (pe |
 Toshiba |
 |
| 1 | 1SS416CT | Silicon Epitaxial Planar Type Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS416CT
1SS416CT
High Speed Switching Application
z Small package z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA
0.6±0.05
Unit: mm
CATHODE MARK 1.0±0.05 0.25±0.03 0.25±0.03
0.65 0.05±0.03
Absolute Maximum Ratings (Ta = 25°C)
C |
Toshiba |
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