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Datasheet 1SS384 Equivalent ( PDF ) - Diode |
| P/N | Descripción | Fabr. | |
| 1SS384 | Silicon epitaxial planar type diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS384
Low Voltage High Speed Switching
- Small package - Composed of 2 independent diodes. - Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
1SS384
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Su
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1SS3 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| 1SS300 | SILICON EPITAXIAL PLANAR DIODE
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| 1SS301 | DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
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| 1SS302 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
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| 1SS306 | SILICON EPITAXIAL PLANAR DIODE
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| 1SS307 | DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)
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| 1SMB28AT3G | 28V 600W Power Zener TVS Diode
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| 1SS511WS | Switching Diode
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
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