Datasheet 1SS379 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	1SS379	Silicon Epitaxial Schottky Barrie Diode TOSHIBA Diode Silicon Epitaxial Planar Type 1SS379 General Purpose Rectifier Applications z Small package z Low forward voltage z Low reverse current z Small total capacitance : SC-59 : VF = 1.0V (typ.) : IR = 0.1nA (typ.) : CT = 3.0pF (typ.) 1SS379 Unit: mm Absolute Maximum Ratings (Ta = 25°C	Toshiba Semiconductor

1SS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
1SS99	Silicon Detector and Mixer Diode	NEC
1SS97	Mixer Diode Free Datasheet http:// Free Datasheet http://	NEC
1SS108	Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching 1SS108 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-154A (Z) Rev. 1 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS108 Cathode White 2	Hitachi Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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