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Datasheet 1SS373 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | 1SS373 | DIODE (HIGH SPEED SWITCHING APPLICATION) TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS373
High Speed Switching Application
Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
1SS373
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15
Reverse voltag |
 Toshiba Semiconductor |
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| 2 | 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE 1SS373
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching Application
Features
• Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
PINNING
PIN 1 2
DESCRIPTION Cathode Anode
12
SY
Absolute Maximum Ratings (T j = 25? )
Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum |
 SEMTECH |
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| 1 | 1SS373 | Diodes SMD Type
Diodes
HIGH SPEED SWITCHING APPLICATION 1SS373
Features
Small Package Low forward voltage :VF = 0.23V(TYP.) IF = 5mA
+0.050.8 -0.05
SOD-523
1.2+0.1 -0.1
+
+0.050.3 -0.05
Unit: mm 0.6+0.1
-0.1
-
1.6+0.1 -0.1
0.77max
+0.050.1 -0.02
0.07max
Absolute Maximum Ratings Ta = 25
Characte |
 KEXIN |
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