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Datasheet 1SS372 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 1SS372 | Schottky Barrier Diodes 1SS372
Schottky Barrier Diodes
SOT-323
Features
Small surface mounting type. Small package. Low forward voltage:VF=0.23V(typ).
Applications
For general purpose applications.
Ordering Information
Type No. 1SS372
Marking N9
Dimensions in inches and (millimeters)
Package Code SOT-323
M |
LGE |
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3 | 1SS372 | SCHOTTKY B ARRIER DIODE S1 S327
SCHOTTKY BARRIER DIODE
FEATURES Small Package Low Forward Voltage APPLICATIONS High Speed Switching
SOT-323
MARKING: N9
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Forward Continuous Current
IFM Peak Forward Current
IFS |
Jin Yu Semiconductor |
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2 | 1SS372 | SCHOTTKY BARRIER DIODE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
1SS372
SCHOTTKY BARRIER DIODE
FEATURES Small Package Low Forward Voltage
APPLICATIONS High Speed Switching
MARKING: N9
SOT-323
N9
N9
Solid dot = Green molding compound device,if none,the normal d |
JCET |
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1 | 1SS372 | Silicon Epitaxial Schottky Barrie Diode TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS372
High Speed Switching Application
1SS372
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
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Toshiba Semiconductor |
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