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Datasheet 1SS367 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 1SS367 | SILICON EPITAXIAL PLANAR DIODE TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS367
High Speed Switching Application
1SS367
Unit: mm
z Small package z Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15 V
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Toshiba Semiconductor |
1SS Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
1SS99 | Silicon Detector and Mixer Diode |
NEC |
|
1SS97 | Mixer Diode |
NEC |
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1SS108 | Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching |
Hitachi Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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