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Datasheet 1N6519 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1n6519 | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | 1N6519 | ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com
Designer’s Data Sheet
Part Number / Ordering Information 1/
1N651 __ __ __ │ │ └ Screening2/
│ │ __ = None
││ ││ ││
TX |  SSDI | rectifier |
| 3 | 1N6519 | 500mA 10kV 70nS-HIGH VOLTAGE DIODE 1N6519
500mA 10kV 70nS-HIGH VOLTAGE DIODE
High reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin.
Outline Drawings :
Features
High speed switching Epoxy resin molded in vacuum, Have anticorrosion in the surfac |  GETE | diode |
| 4 | 1N6519 | 0.5A - 2.0A RECTIFIERS 1N6513, 1N6515, 1N6517, 1N6519
High-reliability discrete products and engineering services since 1977
0.5A – 2.0A RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb p |  Digitron Semiconductors | rectifier |
| 5 | 1N6519 | 2/000 V - 10/000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time 2,000 V - 10,000 V Rectifiers
0.5 A - 2.0 A Forward Current 70 ns Recovery Time
AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575
1N6513 1N6515 1N6517 1N6519
4
JANTX
Part Number
JANTXV
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Working Reverse Voltage (Vrwm) Average Rectified Current (Io) R |  ETC | rectifier |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | |
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