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Datasheet 1N6461 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6461 | QPL 500 Watt Axial Leaded TVS 1N6461 QPL 500 Watt Axial Leaded TVS
Thru
1N6468
TEL:805-498-2111 FAX:805-498-3804 DESCRIPTION
The 1N64xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EMP. |  Semtech Corporation | diode |
| 2 | 1N6461 | TRANSIENT SUPPRESSORS WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6461 thru 1N6468
Voidless-Hermetically-Sealed Unidirectional Transient Suppressors
DESCRIPTION
This series of industry recognized voidless-hermetically-sealed Unidirectional Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF19500/5 |  Microsemi Corporation | tvs-diode |
| 3 | 1N6461US | QPL 500 Watt Surface Mount TVS 1N6461US THRU 1N6468US QPL 500 Watt Surface Mount TVS
POWER DISCRETES Description
The 1N64xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EMP. These devices |  Semtech | diode |
| 4 | 1N6461US | Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors 1N6461US – 1N6468US Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
Qualified Levels: JAN, JANTX, and JANTXV
Available on commercial versions
DESCRIPTION This surface mount series of 500 watt voidless hermetically sealed unidirectional Tr |  Microsemi | tvs-diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | | |
| 8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe  Unisonic Technologies mosfet | | |
| 9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat  BL diode | |
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