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Datasheet 1N6121A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N6121A | BIDIRECTIONAL TRANSIENT SUPPRESSORS |  Microsemi Corporation | tvs-diode |
| 2 | 1N6121A | QPL 500 Watt Axial Leaded TVS 1N6102A QPL 500 Watt Axial Leaded TVS
Thru
1N6137A
TEL:805-498-2111 FAX:805-498-3804 DESCRIPTION
The 1N61xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EM |  Semtech Corporation | diode |
| 3 | 1N6121A | BIDIRECTIONAL TRANSIENT SUPPRESSORS | Microsemi Corporation | tvs-diode |
| 4 | 1N6121A | Diode TVS Single Bi-Dir 32.7V 500W 2-Pin |  New Jersey Semiconductor | diode |
| 5 | 1N6121A | Diode TVS Single Bi-Dir 32.7V 500W 2-Pin | New Jersey Semiconductor | diode |
| 6 | 1N6121A | Diode TVS Single Bi-Dir 32.7V 500W 2-Pin | New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
| 4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
| 5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
| 6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
| 7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f  Formosa MS diode | | |
| 8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe  Unisonic Technologies mosfet | | |
| 9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat  BL diode | |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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