|
|
Datasheet 1N6041A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N6041A | TRANSIENT VOLTAGE SUPPRESSOR DIODES 1N6036-1N6072A
High-reliability discrete products and engineering services since 1977
TRANSIENT VOLTAGE SUPPRESSOR DIODES
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb platin | Digitron Semiconductors | diode |
2 | 1N6041A | METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS 1N6036 - 1N6072A series
1N60 SERIES (1500 WATT) METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments)
FEATURES
q Breakdown voltage range 6.8 - 200 volts q Glass passivated junction q Excellent clamping capability q Low zener impedance q 100% surge | Littelfuse | tvs-diode |
3 | 1N6041A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR 1N6036(A) thru 1N6072(A)
Available on commercial
versions
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/507
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC registered selections for bidirectional devices. All h | Microsemi | tvs-diode |
4 | 1N6041A | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR 1N6036(A) thru 1N6072(A)
Available on commercial
versions
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/507
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC registered selections for bidirectional devices. All h | Microsemi | tvs-diode |
5 | 1N6041A | Diode TVS Single Bi-Dir 10V 1.5KW 2-Pin DO-13 | New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | | |
8 | 1N60 | N-CHANNEL MOSFET UNISONIC TECHNOLOGIES CO., LTD 1N60
1.2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This powe Unisonic Technologies mosfet | | |
9 | 1N60 | SMALL SIGNAL SCHOTTKY DIODE BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 40 V CURRENT: 0.03 A
1N 6 0
SMALL SIGNAL SCHOTTKY DIODE
Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics Sm all tem perat BL diode | |
Esta página es del resultado de búsqueda del 1N6041A. Si pulsa el resultado de búsqueda de 1N6041A se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |