Datasheet 1N5822 Equivalent ( PDF ) - Rectifier

1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500, 620 3 AMP SCHOTTKY BARRIER RECTIFIERS HERMETICALLY SEALED METALLURGICALLY BONDED 1N5822 and DSB5820 thru DSB5822 and DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115, 0.145 Operating Temperature: -65°C to +125°C Storage Temperature: -65°C to +150°C Average Rectified Forward Current: 3.0 AMP @ TL = +55°C, L = 3, 8” Derating:

® 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are in

1N5820-1N5822 1N5820 - 1N5822 Features 3.0 ampere operation at TA = 95°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value 1N5820 1N5821 1N5822 VRRM IF(AV) IFSM Tstg TJ Ma

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820, D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low voltage, high frequency in

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characte