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Datasheet 1N5822 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
11N5822Schottky Barrier Rectifiers

CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers 1N5820 - 1N5822 Taiwan Semiconductor FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free accord
Taiwan Semiconductor
Taiwan Semiconductor
rectifier
21N5822SCHOTTKY RECTIFIERS

1N5820-1N5822 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and
Digitron Semiconductors
Digitron Semiconductors
rectifier
31N58223.0A SCHOTTKY BARRIER RECTIFIER

Won-Top Electronics
Won-Top Electronics
rectifier
41N58223 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/620 • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5822 and DSB5820 thru DSB5822 and DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115/0.145 Operating Temperature: -65°C to +125°C Storage
Compensated Deuices Incorporated
Compensated Deuices Incorporated
rectifier
51N5822LOW DROP POWER SCHOTTKY RECTIFIER

® 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch M
STMicroelectronics
STMicroelectronics
rectifier


1N5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
11N50Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
datasheet 1N50 pdf
21N50GOLD BONDED GERMANIUM DIODES

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 1N50 pdf
31N50N-CHANNEL POWER MOSFET

1N50 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 1.3A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re
Unisonic Technologies
Unisonic Technologies
datasheet 1N50 pdf
41N50-KWN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 1N50-KW Preliminary 1A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara
Unisonic Technologies
Unisonic Technologies
datasheet 1N50-KW pdf
51N500Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
datasheet 1N500 pdf
61N5000Silicon Rectifiers

Microsemi Corporation
Microsemi Corporation
datasheet 1N5000 pdf
71N5000Diode Switching 400V 3A 2-Pin TOP HAT

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 1N5000 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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