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Datasheet 1N5811U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5811U | Aerospace 6 A fast recovery rectifier
1N5811U
Aerospace 6 A fast recovery rectifier
Features
A K K
■ ■ ■ ■ ■ ■ ■ ■ ■
Aerospace applications Surface mount hermetic package High thermal conductivity materials Very small conduction losses Negligible switching losses Extremely fast switching Low forw |  ST Microelectronics | rectifier |
| 2 | 1N5811US | Rectifier Diode 1N5807(US), 1N5809(US), 1N5811(US)
Rectifier Diode Series Ultrafast Recovery
Features
Popular JEDEC Registered Series Voidless Hermetically Sealed Glass Package Available in Axial Leaded and MELF packages Extremely Robust Construction Internal “Category I” Metallurgical Bond |  MA-COM | rectifier |
| 3 | 1N5811US | ULTRA FAST RECOVERY GLASS RECTIFIER
1N5807US thru 1N5811US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
SCOTTSDALE DIVISION
DESCRIPTION
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability |  Microsemi Corporation | rectifier |
| 4 | 1N5811US | Diode Switching 150V 6A 2-Pin SMD |  New Jersey Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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