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Datasheet 1N5258B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1N5258B | 0.5W Hermetically Sealed Glass Zener Diodes Small Signal Product
1N5221B - 1N5263B
Taiwan Semiconductor
0.5W Hermetically Sealed Glass Zener Diodes
FEATURES
- Zener voltage range 2.4 to 56 volts - DO-35 package - Through-hole device type mounting - Hemetically sealed glass - Compression bonded construction - All extermal surfaces are corro |  Taiwan Semiconductor | diode |
| 2 | 1N5258B | 500mW ZENER DIODES ZENER DIODES
SENSITRON SEMICONDUCTOR
OPERATING AND STORAGE TEMPERATURE –55°C TO+200°C
500mW ZENER DIODES / DO-35/DL-35 (MINI MELF)
TYPE
Nominal Zener Voltage VZ @IZT Min BZX / BZV 55 C 2V4 BZX / BZV 55 C 2V7 BZX / BZV 55 C 3V0 BZX / BZV 55 C 3V3 BZX / BZV 55 C 3V6 BZX / BZV 55 C 3V9 BZX / BZV |  SENSITRON | diode |
| 3 | 1N5258B | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
1N5225B to 1N5267B Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Total power dissipation: max. 500 mW • Tolerance series: |  NXP Semiconductors | diode |
| 4 | 1N5258B | Absolute Maximum Ratings Zeners (1N5221B - 1N5279B)
Zeners 1N5221B - 1N5279B
Absolute Maximum Ratings*
Symbol
PD TSTG TJ
TA = 25°C unless otherwise noted
Tolerance = 5%
Parameter
Power Dissipation Derate above 75°C Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for |  Fairchild Semiconductor | diode |
| 5 | 1N5258B | 500mW EPITAXIAL ZENER DIODE |  Diodes Incorporated | diode |
| 6 | 1N5258B | Silicon Z-Diodes 1N5221B...1N5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D D D D
Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5%
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junct |  Vishay Telefunken | diode |
| 7 | 1N5258B | 1N52 SERIES ZENER DIODES |  Leshan Radio Company | diode |
| 8 | 1N5258B | Zener diode Formosa MS
1N5221B~1N5267B
Zener diode
Features
1. 2. 3. 4. High reliability Very sharp reverse characteristic Low reverse current level VZ -tolerance± 5%
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25? Parameter Power dissipation Z-current Junction temperature Storage temper |  Formosa MS | diode |
| 9 | 1N5258B | 500mW 5% DO-35 ZENER DIODE RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N5223B THRU 1N5261B
500mW 5% DO-35 ZENER DIODE
Absolute Maximun Ratings (Ta=25oC)
Items Power Dissipation Power Derating (above 75 oC) Forward Voltage @If = 10 mA Vz Tolerence Junction Temp. Storage Temp. Symbol PTOT Ratings 500 4.0 Vf 1.2 5 -65 to 17 |  Rectron Semiconductor | diode |
1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1N50 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1N50 | GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor diode | | |
| 3 | 1N50 | N-CHANNEL POWER MOSFET 1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state re  Unisonic Technologies mosfet | | |
| 4 | 1N50-KW | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara Unisonic Technologies mosfet | | |
| 5 | 1N500 | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1N5000 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | | |
| 8 | 1N5001 | Silicon Rectifiers Microsemi Corporation rectifier | | |
| 9 | 1N5001 | Diode Switching 600V 3A 2-Pin TOP HAT New Jersey Semiconductor diode | |
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