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Datasheet 1N5240 Equivalent ( PDF ) - Diode |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 1N5240 | Small Signal Zener Diodes www.vishay.com
1N5221 to 1N5267
Vishay Semiconductors
Small Signal Zener Diodes
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom.
2.4 to 75
Test current IZT
1.7 to 20
VZ specification
Thermal equilibrium
Int. construction
Single
UNIT V mA
FEATURES
Silicon planar power Zener diodes
Standard Zener voltage tolerance is ± 5 % with a “B” suffix in the ordering code (e.g.: 1N52
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![]() Vishay |
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2 | 1N5240 | Zener Diode, Rectifier 1N5225 THRU 1N5267
ZENER DIODES
FEATURES
DO-35
min. 1.083 (27.5)
Silicon Planar Power Zener Diodes Standard Zener voltage tolerance is ± 5% with a “B” suffix. Other tolerances are available upon request.
max. .079 (2.0)
Cathode Mark
min. 1.083 (27.5)
These diodes are also available in Mini-MELF case with the type designation ZMM5225 ... ZMM5267, SOT-23 case with the type designation MM
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![]() General Semiconductor |
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3 | 1N5240 | SILICON 500 mW ZENER DIODES |
![]() Microsemi Corporation |
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4 | 1N5240 | SILICON 500 mW ZENER DIODES |
![]() Microsemi Corporation |
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5 | 1N5240 | ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1N5221B-LCC3 TOB-LCC 1N5281B-LCC3
MECHANICAL DATA Dimensions in mm (inches)
5.59 ± 0.13 (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 1.40 ± 0.15 (0.055 ± 0.006)
0.64 ± 0.08 (0.025 ± 0.003)
0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002)
ZENER VOLTAGE REGULATOR DIODE IN HERMETIC CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
0.23 min. (0.009)
3.81 ± 0.13 (0.15 ± 0.005
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![]() Seme LAB |
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1N5 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 1N50 | Diode, Rectifier
| ![]() American Micro semiconductor |
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2 | 1N50 | GOLD BONDED GERMANIUM DIODES
| ![]() New Jersey Semiconductor |
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3 | 1N50 | N-CHANNEL POWER MOSFET
1N50
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
Power MOSFET
1.3A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resis
| ![]() Unisonic Technologies |
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4 | 1N50-KW | N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
1N50-KW
Preliminary
1A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 1N50-KW is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characte
| ![]() Unisonic Technologies |
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5 | 1N500 | Diode, Rectifier
| ![]() American Micro semiconductor |
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6 | 1N5000 | Silicon Rectifiers
| ![]() Microsemi Corporation |
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7 | 1N5000 | Diode Switching 400V 3A 2-Pin TOP HAT
| ![]() New Jersey Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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