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Datasheet 1N5196 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 1N5196 | SWITCHING DIODE • AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C |
 Microsemi |
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| 4 | 1N5196 | GENERAL PURPOSE SILICON DIODES • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED
1N5194 1N5195 1N5196
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C |
 Compensated Deuices Incorporated |
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| 3 | 1N5196 | Diode Switching 225V 0.2A 2-Pin DO-35 |
 New Jersey Semiconductor |
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| 2 | 1N5196UR | LL-35 High Voltage / Current Low Leakage Glass Diodes LL-35 High Voltage / Current
Use Advantages
1N5194UR thru 1N5196UR
Low Leakage Glass Diodes
Used in applications where the highest voltage and current performance of small signal devices are required. In instrument applications for voltage isolation, pulse clipping and glue logic. Ideal for use |
 Microsemi Corporation |
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