Datasheet 18N50 Equivalent ( PDF )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay drivers isc Product Specification 18N50 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

UNISONIC TECHNOLOGIES CO., LTD 18N50 Preliminary Power MOSFET 18 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode Power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance an

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.14Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr

HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the hi

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.092Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, rela

Advanced Power Electronics Corp. AP18N20GH, J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics ▼ RoHS Compliant & Halogen-Free D G Description S AP18N20 series are from Advanced Power innovat

18N25 UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 18A, 250V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The U TC 18N25 is an N -channel enh ancement m ode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high ene

UNISONIC TECHNOLOGIES CO., LTD 18N40 400V N-CHANNEL POWER MOSFET DESCRIPTION Power MOSFET The UTC 18N40 is a 400V N-channel Power MOSFET, providing customers with perfect RDS(ON), low gate charge and operation with low gate voltages. The UTC 18N40 is generally used as a load switch or applied in

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay