Datasheet 16N50 Equivalent ( PDF )

UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the av

SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 68 17.6 21.8 Single D Low Figure-of-Merit Ron x Qg 0.38 100 % Avalanche Tested Gate Charge Improved Trr, Qrr Improved Compliant to RoHS Directive 2002, 95, EC G D S GD S D2PAK

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv, dt rated 2 Ultra low effective capacitances Improved transconductance P-TO220-3-31 3 12 PG-TO-220-3-31;-3-111: Fully isolated package (2

S E M I C O N D U C T O R RFD16N03L, RFD16N03LSM 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) December 1995 Features 16A, 30V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Dire

RFD16N05, RFD16N05SM Data Sheet November 2003 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization o

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FQP16N25 N-Channel QFET® MOSFET FQP16N25 N-Channel QFET® MOSFET 250 V, 16 A, 230 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E, D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which

UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-st

SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 68 17.6 21.8 Single D Low Figure-of-Merit Ron x Qg 0.38 100 % Avalanche Tested Ga