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Datasheet 13N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
113N60N-Channel Power MOSFET, Transistor

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thre
nELL
nELL
mosfet
213N60AN-Channel Power MOSFET, Transistor

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thre
nELL
nELL
mosfet
313N60AFN-Channel Power MOSFET, Transistor

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thre
nELL
nELL
mosfet
413N60M2N-CHANNEL POWER MOSFET

STF13N60M2, STFI13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg 2 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet − production data Features 3 2 1 TO-220FP 1 23 I2PAKFP (TO-281) Figure 1. Internal schematic diagram AM15572v1 Order codes VDS @ TJmax RDS(on) max I
STMicroelectronics
STMicroelectronics
mosfet
513N60M2-045YN-CHANNEL POWER MOSFET

STF13N60M2(045Y) N-channel 600 V, 0.35 Ω typ., 11 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Datasheet − production data Features 3 2 1 TO-220FP narrow leads Figure 1. Internal schematic diagram Order codes STF13N60M2(045Y) VDS @ TJmax 650 V RDS(on) max 0.38 Ω ID 11 A •
STMicroelectronics
STMicroelectronics
mosfet


13N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
113N03LAIPD13N03LA

IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Infineon Technologies
Infineon Technologies
datasheet 13N03LA pdf
213N06LFQB13N06L

FQB13N06L / FQI13N06L May 2001 QFET FQB13N06L / FQI13N06L 60V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailor
Fairchild Semiconductor
Fairchild Semiconductor
datasheet 13N06L pdf
313N10FQB13N10

FQB13N10 / FQI13N10 January 2001 QFET FQB13N10 / FQI13N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
Fairchild Semiconductor
Fairchild Semiconductor
datasheet 13N10 pdf
413N40N-Channel Mosfet Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 13N40 ·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
datasheet 13N40 pdf
513N40N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40 Preliminary 13A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 13N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-st
Unisonic Technologies
Unisonic Technologies
datasheet 13N40 pdf
613N40K-MTN-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N40K-MT Preliminary 13A, 400V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 13N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in a
Unisonic Technologies
Unisonic Technologies
datasheet 13N40K-MT pdf
713N50N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET „ DESCRIPTION 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching
Unisonic Technologies
Unisonic Technologies
datasheet 13N50 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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